FDW2507NZ_NL ,Common Drain N-Channel 2.5V specified PowerTrench MOSFETApplications • Li-Ion Battery Pack • High performance trench technology for extremely low R @ V = ..
FDW2508P ,Dual P-Channel 1.8 V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –6 A, –12 V. R = 18 mΩ @ V = –4.5 V DS(ON) G ..
FDW2508P_NL ,Dual P-Channel 1.8 V Specified PowerTrench MOSFETApplications • Low gate charge(26nC typical) • Power management • High performance trench technolog ..
FDW2508PB ,Dual P-Channel -1.8V Specific Power Trench® MOSFET -12V, -6A, 18mOhmsapplications. Max r = 30mΩ at V = –1.8V, I = –4ADS(on) GS D Low gate charge High performance tre ..
FDW2509NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETChannel 2.5V Specified PowerTrenchDual N200May FDW2509NZ T = 25°C unles ..
FDW2510NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FS2KM-16A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FS300R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS300R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
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FDW2507NZ_NL
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2507NZ D G2 D S2 D G1 D S1 March 2003 FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This monolithic common drain N-Channel MOSFET has • 7.5 A, 20 V R = 19 mΩ @ V = 4.5 V DS(ON) GS been designed using Fairchild Semiconductor’s R = 23 mΩ @ V = 2.5 V DS(ON) GS advanced PowerTrench process to optimize the R DS(ON) @ V = 2.5v on special TSSOP-8 lead frame with all GS • Isolated source and drain pins the drains on one side of the package. • ESD protection diode (note 3) Applications • Li-Ion Battery Pack • High performance trench technology for extremely low R @ V = 2.5 V DS(ON) GS • Low profile TSSOP-8 package 1 8 2 7 3 6 TSSOP-8 Pin 1 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 30 Power Dissipation for Single Operation (Note 1a) 1.6 P W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 77 R °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 114 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2507NZ FDW2507NZ 13’’ 12mm 3000 units FDW2507NZ Rev C2 2003
