FDW2506P_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch• High performance trench technology for extremelylow RDS(ON)• Motor drive ..
FDW2507N ,Dual N-Channel 2.5V specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Li-Ion Battery Pack• Low profile TSSOP-8 package1 82 73 64 ..
FDW2507NZ ,Dual N-Channel 2.5V specified PowerTrench MOSFETFeaturesThis dual N-Channel MOSFET has been designed• 7.5 A, 20 V R = 19 mΩ @ V = 4.5 VDS(ON) GSus ..
FDW2507NZ_NL ,Common Drain N-Channel 2.5V specified PowerTrench MOSFETApplications • Li-Ion Battery Pack • High performance trench technology for extremely low R @ V = ..
FDW2508P ,Dual P-Channel 1.8 V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –6 A, –12 V. R = 18 mΩ @ V = –4.5 V DS(ON) G ..
FDW2508P_NL ,Dual P-Channel 1.8 V Specified PowerTrench MOSFETApplications • Low gate charge(26nC typical) • Power management • High performance trench technolog ..
FS2KM-16A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS2KM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS300R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS300R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FDW2506P_NL
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2506P G2 G1 S2 S1 S2 S1 D2 D1 October 2000 FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –5.3 A, –20 V, R = 0.022 Ω @ V = –4.5 V. DS(ON) GS gate version of Fairchild's Semiconductor’s advanced R = 0.033 Ω @ V = –2.5V. DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1) –5.3 A D – Pulsed –30 P Power Dissipation for Single Operation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 125 R °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2506P FDW2506P 13’’ 12mm 2500 units 2000 FDW2506P Rev. C (W)
