FDW2503NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 20 mΩ @ V = 4.5V DS(O ..
FDW2504P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 ..
FDW2506P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –5.3 A, –20 V, R = 0.022 Ω @ V = –4.5 ..
FDW2506P_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch• High performance trench technology for extremelylow RDS(ON)• Motor drive ..
FDW2507N ,Dual N-Channel 2.5V specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Li-Ion Battery Pack• Low profile TSSOP-8 package1 82 73 64 ..
FDW2507NZ ,Dual N-Channel 2.5V specified PowerTrench MOSFETFeaturesThis dual N-Channel MOSFET has been designed• 7.5 A, 20 V R = 19 mΩ @ V = 4.5 VDS(ON) GSus ..
FS2KM-16A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS2KM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS300R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS300R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FDW2503NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2503NZ October 2001 FDW2503NZ Ò Ò Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N -Channel 2.5V specified MOSFET is a rugged · 5.5 A, 20 V. R = 20 mW @ V = 4.5V DS(ON) GS gate version of Fairchild Semiconductor’s advanced RDS(ON) = 26 mW @ V GS = 2.5V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). · ESD protection diode (note 3) Applications · Load switch · High performance trench technology for extremely low RDS(ON) · Motor drive · DC/DC conversion · Low profile TSSOP-8 package · Power management 1 8 2 7 3 6 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS VGSS Gate-Source Voltage ±12 V I D Drain Current – Continuous (Note 1a) 5.5 A – Pulsed 30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 100 °C/W qJA (Note 1b) 125 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2503NZ FDW2503NZ 13’’ 12mm 3000 units Ó2001 FDW2503NZ Rev C(W)
