FDW2503N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 VDS(ON ..
FDW2503NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 20 mΩ @ V = 4.5V DS(O ..
FDW2504P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 ..
FDW2506P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –5.3 A, –20 V, R = 0.022 Ω @ V = –4.5 ..
FDW2506P_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch• High performance trench technology for extremelylow RDS(ON)• Motor drive ..
FDW2507N ,Dual N-Channel 2.5V specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Li-Ion Battery Pack• Low profile TSSOP-8 package1 82 73 64 ..
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FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2503N G1 G2 S1 S2 S1 S2 D1 D2 September 2000 FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 V DS(ON) GS gate version of Fairchild's Semiconductor’s advanced R = 0.035 Ω @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 5.5 A D – Pulsed 30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 125 RθJA °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2503N FDW2503N 13’’ 12mm 3000 units 2000 FDW2503N Rev D (W)
