FDW2502PZ ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low RDS(ON) . • ..
FDW2503N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 VDS(ON ..
FDW2503NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 20 mΩ @ V = 4.5V DS(O ..
FDW2504P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 ..
FDW2506P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –5.3 A, –20 V, R = 0.022 Ω @ V = –4.5 ..
FDW2506P_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch• High performance trench technology for extremelylow RDS(ON)• Motor drive ..
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FS2KM-16A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS2KM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS300R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDW2502PZ
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2502PZ G1 G2 S1 S2 S1 S2 D2 D1 April 2001 FDW2502PZ Ò Ò Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is a rugged · –4.4 A, –20 V. R = 35 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild's Semiconductor’s advanced RDS(ON) = 57 mW @ V GS = –2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Extended V range (±12V) for battery applications. GSS drive voltage (2.5V –12V). · ESD protection diode (note 3). Applications · Load switch · High performance trench technology for extremely low RDS(ON) . · Motor drive · DC/DC conversion · Low profile TSSOP-8 package. · Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±12 V GSS ID Drain Current – Continuous (Note 1a) –4.4 A – Pulsed –30 P Power Dissipation for Single Operation (Note 1a) 1.0 W D (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2502PZ FDW2502PZ 13’’ 12mm 3000 units Ó2001 FDW2502PZ Rev. C (W)
