FDW2501N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 6 A, 20 V. R = 0.018 Ω @ V = 4.5VDS(ON) G ..
FDW2501NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 6 A, 20 V. R = 18 mΩ @ V = 4.5V DS(ON) ..
FDW2502P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –4.4 A, –20 V. R = 0.035 Ω @ V = –4.5 VDS ..
FDW2502PZ ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low RDS(ON) . • ..
FDW2503N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 VDS(ON ..
FDW2503NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 20 mΩ @ V = 4.5V DS(O ..
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FS225R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS22SM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS22SM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FS22SM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501N September 2000 FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged • 6 A, 20 V. R = 0.018 Ω @ V = 4.5V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.028 Ω @ V = 2.5V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • High performance trench technology for extremely Applications low R DS(ON) • Load switch • Low profile TSSOP-8 package • Motor drive • DC/DC conversion • Power management 1 8 2 7 3 6 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±12 I D Drain Current – Continuous (Note 1a) 6A – Pulsed 30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 125 θJA °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2501N FDW2501N 13’’ 12mm 3000 units 2000 FDW2501N Rev D(W)
