IC Phoenix
 
Home ›  FF11 > FDV304P,Digital FET, P-Channel
FDV304P Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDV304PFAIRCHILDN/a117000avaiDigital FET, P-Channel


FDV304P ,Digital FET, P-ChannelFeatures-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transis ..
FDV305N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDV305N
FDVE1040-4R7M , 20 V, 4 A, Synchronous, Step-Down DC-to-DC Regulator
FDW2501N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 6 A, 20 V. R = 0.018 Ω @ V = 4.5VDS(ON) G ..
FDW2501NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 6 A, 20 V. R = 18 mΩ @ V = 4.5V DS(ON) ..
FDW2502P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –4.4 A, –20 V. R = 0.035 Ω @ V = –4.5 VDS ..
FS20.25 , ETHERNET SMD FILTER APPLY TO GENERIC IC
FS200R12PT4 , EconoPACK™4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode
FS2022B , TRANSMIT / RECEIVER FILTER APPLY TO GENERIC IC
FS2022B-2 , 10 BASE-T ETHERNET SMD FILTER
FS2025 , ETHERNET SMD FILTER APPLY TO GENERIC IC
FS20KMA-5A , MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE


FDV304P
Digital FET, P-Channel
August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS R = 1.1 W @ V = -4.5 V DS(ON) GS technology. This very high density process is tailored to minimize R = 1.5 W @ V = -2.7 V. DS(ON) GS on-state resistance at low gate drive conditions. This device is Very low level gate drive requirements allowing direct designed especially for application in battery power applications operation in 3V circuits. V < 1.5V. such as notebook computers and cellular phones. This device GS(th) has excellent on-state resistance even at gate drive voltages as Gate-Source Zener for ESD ruggedness. low as 2.5 volts. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. TM TM SuperSOT -6 SuperSOT -8 SO-8 SOIC-16 SOT-23 SOT-223 Mark:304 D S G o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDV304P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous -0.46 A D - Pulsed -1.5 P Maximum Power Dissipation 0.35 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 357 °C/W qJA © 1997 FDV304P Rev.E1
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED