FDU7030BL ,30V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• M ..
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FDU7030BL
30V N-Channel PowerTrench MOSFET
FDD7030BL/FDU7030BL December 2001 FDD7030BL/FDU7030BL Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 56 A, 30 V R = 9.5 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 13 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (23nC typ.) low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) · Fast Switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 56 A D C @T =25°C (Note 1a) 14 A Pulsed (Note 1a) 100 PD Power Dissipation @T =25°C (Note 3) 60 W C @T =25°C (Note 1a) 2.8 A @T =25°C (Note 1b) 1.3 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C Thermal Characteristics RqJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD7030BL FDD7030BL D-PAK (TO-252) 13’’ 12mm 2500 units FDU7030BL FDU7030BL I-PAK (TO-251) Tube N/A 75 Ó2001 Fairchild Semiconductor Corp. FDD7030BL/FDU7030BL Rev A(W)