FDU6612A ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDU6612A ,30V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• M ..
FDU6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDU6680 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDU6680A ,30V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• M ..
FDU6682 ,30V N-Channel PowerTrench MOSFETFDD6682/FDU6682June 2004FDD6682/FDU6682Ò30V N-Channel PowerTrench MOSFET
FS12KMA-4A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12KMA-5A , MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12VS-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDU6612A
30V N-Channel PowerTrench MOSFET
FDD6612A/FDU6612A January 2002 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 30 A, 30 V R = 20 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 28 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge (9 nC typical) low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) • Fast Switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G DS (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 30 A D C @T =25°C (Note 1a) 9.5 A Pulsed (Note 1a) 60 P Power Dissipation @T =25°C (Note 3) 36 W D C @T =25°C (Note 1a) 2.8 A @T=25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 3.5 R °C/W θJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 R °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75 FDD6612A/FDU6612A Rev D1 (W) 2002
