FDU3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
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FDU3580
80V N-Channel PowerTrench MOSFET
FDD3580/FDU3580 August 2001 FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 7.7 A, 80 V. R = 29 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 33 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge (34nC typical) This MOSFET features faster switching and lower gate change than other MOSFETs with comparable R • Fast switching speed DS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low R DS(ON) • High power and current handling capability D D D G G I-PAK G S S D-PAK (TO-251AA) D-PAK TO-252 TO-252 G DS (TO-252) (TO- S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage V GSS ± 20 I Maximum Drain Current-Continuous (Note 1a) 7.7 A D Maximum Drain Current – Pulsed 50 o P Maximum Power Dissipation @T = 25 C (Note 1) 42 W D C o T = 25 C (Note 1a) 3.8 A o T = 25 C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range −55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to- Case (Note 1) 3.5 R °C/W θJC R Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3580 FDD3580 13’’ 16mm 2500 FDU3580 FDU3580 Tube N/A 75 2001 FDD3580/FDU3580 Rev A1(W)
