FDU2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDU2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDU2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDU2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDU3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDU3N40 ,N-Channel UniFETTM MOSFET 400V, 2A, 3.4?Applicationslamp ballasts.•LED TV• Consumer Appliances• Lighting• Uninterruptible Power SupplyDDGG ..
FS12KMA-4A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12KMA-5A , MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12VS-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDU2572
N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhm
FDD2572 / FDU2572 July 2002 FDD2572 / FDU2572 ® N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications r = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 26nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82860 Electronic Valve Train System DRAIN D SOURCE (FLANGE) DRAIN DRAIN GATE (FLANGE) GATE G SOURCE TO-252AA TO-251AA FDD SERIES FDU SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 29 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 20 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 4 amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 36 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-251, TO-252 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-251, TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDD2572 / FDU2572 Rev. A2
