FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ-06 , MITSUBISHI Nch POWER MOSFET
FS10KMJ-2 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ-3 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDT434
P-Channel 2.5V Specified PowerTrench MOSFET
FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced • –5.5 A, –20 V. R = 0.050 Ω @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 0.070 Ω @ V = –2.5 V. DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Low gate charge (13nC typical) low gate charge for superior switching performance. • High performance trench technology for extremely Applications low R . DS(ON) • Low Dropout Regulator • High power and current handling capability in a • DC/DC converter widely used surface mount package. • Load switch • Motor driving D D D D S S D G G D S SOT-223* G S G SOT-223 (J23Z) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS (Note 1a) ID Drain Current – Continuous –6 A – Pulsed –30 P Power Dissipation for Single Operation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T , T Operating and Storage Junction Temperature Range -55 to +150 J stg °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 42 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 12 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 434 FDT434P 13’’ 12mm 2500 units FDT434P Rev. C1 (W) 1999
