FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ-06 , MITSUBISHI Nch POWER MOSFET
FS10KMJ-2 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ-3 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDT3612
100V N-Channel PowerTrench MOSFET
FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.7 A, 100 V. R = 120 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 130 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Low gate charge (14nC typ) R specifications. The result is a MOSFET that is DS(ON) easy and safer to drive (even at very high frequencies), • High performance trench technology for extremely and DC/DC power supply designs with higher overall low R DS(ON) efficiency. Applications • High power and current handling capability in a widely used surface mount package • DC/DC converter • Motor driving D D D D S S D G G D S SOT-223* G S G SOT-223 (J23Z) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 3.7 A D – Pulsed 20 P W D Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 (Note 1c) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3612 FDT3612 13’’ 12mm 2500 units FDT3612 Rev. C1 (W) 2001
