FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDS9958
-60V Dual P-Channel PowerTrench?MOSFET
® FDS9958 Dual P-Channel PowerTrench MOSFET July 2007 FDS9958 tm ® Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSFETs are produced DS(on) GS D ® using Fairchild Semiconductor’s advanced PowerTrench Max r =135mΩ at V = -4.5V, I = -2.5A DS(on) GS D process that has been especially tailored to minimize the RoHS Compliant on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Load Switch Power Management D2 D2 4 G2 D2 5 D1 D1 D2 Q2 Q2 S2 6 3 G2 D1 G1 7 2 S2 Q1 Q1 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) -2.9 I A D -Pulsed -12 E Single Pulse Avalanche Energy (Note 3) 54 mJ AS Power Dissipation for Dual Operation 2 P Power Dissipation (Note 1a) 1.6 W D Power Dissipation (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 40 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS9958 FDS9958 SO-8 330mm 12mm 2500units 1 ©2007 FDS9958 Rev.C
