FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDS9953A_NL
Dual 30V P-Channel PowerTrench MOSFET
FDS9953A May 2001 FDS9953A Ò Ò Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –2.9 A, –30 V R = 130 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 200 mW @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Low gate charge (2.5nC typical) voltage ratings (4.5V – 25V). · Fast switching speed Applications · Power management · High performance trench technology for extremely low RDS(ON) · Load switch · Battery protection · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 Q2 SO-8 G S1 8 1 G2 S S S2 SO-8 S Pin 1 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units –30 V Drain-Source Voltage V DSS ±25 V Gate-Source Voltage V GSS ±2.9 ID Drain Current – Continuous (Note 1a) A – Pulsed ±10 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9953A FDS9953A 13’’ 12mm 2500 units Ó2001 FDS9953A Rev B(W)
