FDS9945 ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDS9945
60V N-Channel PowerTrench MOSFET
FDS9945 February 2001 FDS9945 Ò 60V N-Channel PowerTrench MOSFET General Description Features · 3.5 A, 60 V. R = 0.100W @ V = 10 V DS(ON) GS These N Channel Logic Level MOSFET have been R = 0.200W @ V = 4.5V DS(ON) GS designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or · Optimized for use in switching DC/DC converters conventional switching PWM controllers. with PWM controllers The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) · Very fast switching specifications. · Low gate charge. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 G2 S S S2 Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 3.5 A D – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 2 W D (Note 1b) 1.6 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9945 FDS9945 13’’ 12mm 2500 units Ó2001 FDS9945 Rev B(W)
