FDS9933A ,Dual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -3.8 A, -20 V. R = 0.075 ..
FDS9933A_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(on)• Load switch• High power and current handling capability.• DC/DC converte ..
FDS9934C ,20V Complementary PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required. Q2D2D5 4D2DD1D36D1DQ17 2 ..
FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FS100R12KT3 , EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDS9933A
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDS9933A November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced • -3.8 A, -20 V. R = 0.075 Ω @ V = -4.5 V DS(on) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.105 Ω @ V = -2.5 V. process that has been especially tailored to minimize the DS(on) GS on-state resistance and yet maintain low gate charge for • Low gate charge ( 7nC typical ). superior switching performance. • Fast switching speed. • High performance trench technology for extremely Applications low R . DS(on) • Load switch • High power and current handling capability. • DC/DC converter • Motor drives D2 5 4 D2 D1 6 3 D1 7 2 G2 S2 8 1 G1 pin 1 SO-8 S1 o TA=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter FDS9933A Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage ± 8V GSS I Drain Current - Continuous (Note 1a) -3.8 A D - Pulsed -20 PD Power Dissipation for Dual Operation 2.0 W (Note 1a) Power Dissipation for Single Operation 1.6 (Note 1b) 1.0 (Note 1c) 0.9 Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 78 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9933A FDS9933A 13’’ 12mm 2500 units 1998 FDS9933A Rev. C
