FDS9933_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, R = 55 mΩ @ V = –4.5 V DS ..
FDS9933A ,Dual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -3.8 A, -20 V. R = 0.075 ..
FDS9933A_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(on)• Load switch• High power and current handling capability.• DC/DC converte ..
FDS9934C ,20V Complementary PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required. Q2D2D5 4D2DD1D36D1DQ17 2 ..
FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
FS0H104ZF , Super Capacitors
FS100R12KT3 , EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FDS9933-FDS9933_NL
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933 January 2004 FDS9933 Ò Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –5 A, –20 V, R = 55 mW @ V = –4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 90 mW @ V = –2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage · Extended V range (±12V) for battery applications GSS (2.5V – 12V). · Low gate charge Applications · Load switch · High performance trench technology for extremely low R DS(ON) · Motor drive · DC/DC conversion · High power and current handling capability · Power management D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units –20 V Drain-Source Voltage V DSS ±12 V Gate-Source Voltage V GSS –5 I Drain Current – Continuous (Note 1a) A D –30 – Pulsed P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9933 FDS9933 13’’ 12mm 2500 units FDS9933 Rev B Ó2004 Fairchild Semiconductor International
