FDS9400A ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gave drive • Low gate charge (2.4nC typical) voltage ratings ..
FDS9400A ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –3.4 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9412 ,Single N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel Logic Level MOSFET is produced• 7.9 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FDS9412_NL ,Single N-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer DC-DCconverter where fast switching, low conduction loss and ..
FDS9431A ,P-Channel 2.5V Specified MOSFETGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced• -3.5 A, -20 V. R = 0.130 Ω @ ..
FDS9431A_F085 ,-20V P-Channel 2.5V Specified MOSFETApplicationsDS(ON) High power and current handling capability. DC/DC converter Power management ..
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
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FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
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o Ultrafast 35 ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low Ima ..
FRP2010CC. ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 VELI DEIHHE‘IEWI 0027636 l ICC”:i “‘43:“1":“':“:“‘“"':““““ L
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FRP2020CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
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o Ultrafast 35 ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low Ima ..
FDS9400A
30V P-Channel PowerTrench MOSFET
FDS9400A December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –3.4 A, –30 V R = 130 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 200 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate charge (2.4nC typical) voltage ratings (4.5V – 25V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) –3.4 A D – Pulsed –10 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9400A FDS9400A 13’’ 12mm 2500 units FDS9400A Rev B1(W) 2001
