FDS8984_F085 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 23mΩ, V = 10V, I = 7AThis N-Channel MOSFET has been designed specifically to DS( ..
FDS9400 ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS9400A ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gave drive • Low gate charge (2.4nC typical) voltage ratings ..
FDS9400A ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –3.4 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9412 ,Single N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel Logic Level MOSFET is produced• 7.9 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FDS9412_NL ,Single N-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer DC-DCconverter where fast switching, low conduction loss and ..
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
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FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
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FDS8984
30V N-Channel PowerTrench?MOSFET
® FDS8984 N-Channel PowerTrench MOSFET May 2007 FDS8984 tm ® N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ General Description Features Max r = 23mΩ, V = 10V, I = 7A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency of DC/DC converters using Max r = 30mΩ, V = 4.5V, I = 6A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge r and fast switching speed. DS(ON) 100% R tested G RoHS Compliant D2 D D2 D 5 4 D1 D D1 D Q2 6 3 G2 7 2 SO-8 S2 G G1 S Q1 1 S1 S 8 Pin 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current Continuous (Note 1a) 7 A I D Pulsed 30 A E Single Pulse Avalache Energy (Note 2) 32 mJ AS Power Dissipation for Single Operation 1.6 W P D Derate above 25°C 13 mW/°C T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8984 FDS8984 SO-8 330mm 12mm 2500 units ©2007 1 FDS8984 Rev. A1
