FDS8984 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 23mΩ, V = 10V, I = 7AThis N-Channel MOSFET has been designed specifically to DS( ..
FDS8984_F085 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 23mΩ, V = 10V, I = 7AThis N-Channel MOSFET has been designed specifically to DS( ..
FDS9400 ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS9400A ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gave drive • Low gate charge (2.4nC typical) voltage ratings ..
FDS9400A ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –3.4 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9412 ,Single N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel Logic Level MOSFET is produced• 7.9 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FRF10A40 , FRD - Low Forward Voltage Drop
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
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. Soft Recovery (S > 0.5)
. Low lamzc)
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FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
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. Soft Recovery (S > 0.5)
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FDS8978
30V N-Channel PowerTrench?MOSFET
® FDS8978 Dual N-Channel PowerTrench MOSFET January 2011 FDS8978 ® N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description r = 18mΩ, V = 10V, I = 7.5A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency of DC/DC converters using r = 21mΩ, V = 4.5V, I = 6.9A either synchronous or conventional switching PWM DS(on) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(on) r DS(on) Applications Low gate charge DC/DC converters High power and current handling capability 100% Rg Tested RoHS Compliant D2 D2 D2 G2 5 4 D1 D1 6 D2 Q2 3 S2 SO-8 D1 7 2 G1 G2 S2 S1 D1 G1 8 Q1 1 S1 Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 7.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 25 C, V = 4.5V, R = 50C/W) 6.9 A A GS θJA Pulsed 49 A E Single Pulse Avalanche Energy (Note 1) 57 mJ AS Power dissipation 1.6 W P D o o Derate above 25C13mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Case (Note 2) 40 C/W θJC o R Thermal Resistance, Junction to Ambient (Note 2a) 78 C/W θJA o R Thermal Resistance, Junction to Ambient (Note 2c) 135 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8978 FDS8978 SO-8 330mm 12mm 2500 units ©2011 1 FDS8978 Rev. B1
