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FDS8949_F085
40V Dual N-Channel Logic Level PowerTrench? MOSFET
® FDS8949_F085 Dual N-Channel Logic Level PowerTrench MOSFET February 2010 FDS8949_F085 tm ® Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mΩ Features General Description These N-Channel Logic Level MOSFETs are produced Max r = 29mΩ at V = 10V DS(on) GS using Fairchild Semiconductor’s advanced Max r = 36mΩ at V = 4.5V ® DS(on) GS PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet maintain superior switching performance. High performance trench technology for extremely low These devices are well suited for low voltage and r DS(on) battery powered applications where low in-line power High power and current handling capability loss and fast switching are required. Qualified to AEC Q101 Applications RoHS compliant Inverter Power suppliers D2 D2 D1 D1 G2 SO-8 S2 G1 S1 Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 6 I A D -Pulsed 20 E Drain-Source Avalanche Energy (Note 3) 26 mJ AS Power Dissipation for Dual Operation 2 P 1.6 W Power Dissipation for Single Operation (Note 1a) D (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81 θJA R Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135 °C/W θJA R Thermal Resistance, Junction to Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8949 FDS8949_F085 13’’ 12mm 2500 units ©2010 1 FDS8949_F085 Rev. A
