FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorFeaturesSO-8 P-Channel enhancement mode power field effect-4.0 A, -30 V. R = 0.052Ω @ V = -10 V ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computerused surface mount package.power management and other batter ..
FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFET®FDS8949 Dual N-Channel Logic Level PowerTrench MOSFETOctober 2006FDS8949 ..
FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFETGeneral DescriptionThese N-Channel Logic Level MOSFETs are produced Max r = 29mΩ at V = 10VDS(on) ..
FDS8949_F085 ,40V Dual N-Channel Logic Level PowerTrench? MOSFETApplications RoHS compliant Inverter Power suppliersD2D2D1D1G2SO-8S2G1S1Pin 1MOSFET Maximum Rati ..
FRF10A40 , FRD - Low Forward Voltage Drop
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
I V 3469674 FAIRCHILD SEMICONDUCTOR -. V 840 27842 n
I
tll-Ml-ll- FRP ..
FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low lamzc)
. 1 ..
FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
E
o Ultrafast 35 ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low Ima ..
FRP2010CC. ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 VELI DEIHHE‘IEWI 0027636 l ICC”:i “‘43:“1":“':“:“‘“"':““““ L
_ 3469674 FAIRCHILD SEMICONDUCTOR 84 ..
FDS8947A
Dual P-Channel Enhancement Mode Field Effect Transistor
March 1998 FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4.0 A, -30 V. R = 0.052W @ V = -10 V DS(ON) GS transistors are produced using Fairchild's proprietary, high cell R = 0.080W @ V = -4.5 V. DS(ON) GS density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide High density cell design for extremely low R . DS(ON) superior switching performance. These devices are particularly High power and current handling capability in a widely suited for low voltage applications such as notebook computer used surface mount package. power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to Dual MOSFET in surface mount package. transients are needed. TM TM SOT-23 SO-8 SOT-223 SOIC-16 SuperSOT -6 SuperSOT -8 D2 4 5 D2 D1 6 3 D1 7 2 G2 S2 1 8 G1 pin 1 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS8947A Units V Drain-Source Voltage -30 V DSS Gate-Source Voltage -20 V V GSS I Drain Current - Continuous (Note 1a) - 4.0 A D - Pulsed -20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC FDS8947A Rev.B © 1998 FDS 8947A
