FDS8936S ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorFeaturesSO-8 P-Channel enhancement mode power field effect-4.0 A, -30 V. R = 0.052Ω @ V = -10 V ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computerused surface mount package.power management and other batter ..
FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFET®FDS8949 Dual N-Channel Logic Level PowerTrench MOSFETOctober 2006FDS8949 ..
FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFETGeneral DescriptionThese N-Channel Logic Level MOSFETs are produced Max r = 29mΩ at V = 10VDS(on) ..
FRF10A40 , FRD - Low Forward Voltage Drop
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low lamzc)
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FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$©
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o Ultrafast 35 ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
. Low Ima ..
FRP2010CC. ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 VELI DEIHHE‘IEWI 0027636 l ICC”:i “‘43:“1":“':“:“‘“"':““““ L
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FDS8936S
Dual N-Channel Enhancement Mode Field Effect Transistor
August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features Low gate charge. SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell 5.0 A, 30 V. R = 0.040 W @ V = 10 V. density, DMOS technology. This very high density process is DS(ON) GS especially tailored to provide superior switching performance High density cell design for extremely low R . DS(ON) and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk High power and current handling capability in a widely drive motor control, battery powered circuits where fast used surface mount package. switching, low in-line power loss, and resistance to transients Dual MOSFET in surface mount package. are needed. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 5 4 6 3 7 2 1 8 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS8936S Units V Drain-Source Voltage 30 V DSS Gate-Source Voltage ±20 V V GSS I Drain Current - Continuous (Note 1a) 5 A D - Pulsed 20 Power Dissipation for Dual Operation 2 W P D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC © 1997 FDS8936S Rev.C
