FDS8934A ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDS8936 ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8936A ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8936S ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorFeaturesSO-8 P-Channel enhancement mode power field effect-4.0 A, -30 V. R = 0.052Ω @ V = -10 V ..
FDS8947A ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FRA1605G , 16.0 AMPS. Glass Passivated Fast Recovery Rectifiers
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FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
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FDS8934A
Dual P-Channel Enhancement Mode Field Effect Transistor
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, R = 0.055 W @ V = -4.5 V, DS(ON) GS transistors are produced using Fairchild's proprietary, high R = 0.072 W @ V = -2.5 V. DS(ON) GS cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design for extremely low R . DS(ON) and provide superior switching performance. These devices High power and current handling capability in a widely are particularly suited for low voltage applications such as used surface mount package. notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, Dual MOSFET in surface mount package. and resistance to transients are needed. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D2 5 4 D2 D1 D1 6 3 7 2 G2 S2 G1 pin 1 1 8 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter FDS8934A Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous (Note 1a) - 4 A D - Pulsed -20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC FDS8934A Rev.B © 1998 FDS 8934A
