FDS8926A_NL ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8928A ,Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description8AFDS892 July (T = 25°C unless otherwise noted)AV I VDV I VDo oI = C CΔ / ΔTJ ..
FDS8928A_NL ,Dual N & P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer powerswitching, low in-line power loss, and resistance toTM ..
FDS8934 ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDS8934A ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDS8936 ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FRA1605G , 16.0 AMPS. Glass Passivated Fast Recovery Rectifiers
FRA805G , 8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts
FRF10A40 , FRD - Low Forward Voltage Drop
FRM3Z231LT , InGaAs-PIN/Preamp Receiver
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures:
q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
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FDS8926A_NL
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. R = 0.030 W @ V = 4.5 V DS(ON) GS transistors are produced using Fairchild's proprietary, high R = 0.038 W @ V = 2.5 V. DS(ON) GS cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low R . DS(ON) performance and minimize on-state resistance. These devices Combines low gate threshold (fully enhanced at 2.5V) with are particularly suited for low voltage applications such as disk high breakdown voltage of 30 V. drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients High power and current handling capability in a widely are needed. used surface mount package. Dual MOSFET in surface mount package. TM TM SOIC-16 SOT-23 SuperSOT -6 SO-8 SOT-223 SuperSOT -8 D2 5 4 D2 D1 6 D1 3 7 2 G2 S2 G1 1 pin 1 8 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS8926A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1a) 5.5 A D - Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W JC q FDS8926A Rev.B © 1998 FDS 8926A
