FDS89161 ,100V Dual N-Channel PowerTrench?MOSFETApplications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Top ..
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FDS8926A_NL ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS8928A ,Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description8AFDS892 July (T = 25°C unless otherwise noted)AV I VDV I VDo oI = C CΔ / ΔTJ ..
FDS8928A_NL ,Dual N & P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer powerswitching, low in-line power loss, and resistance toTM ..
FDS8934 ,Dual P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
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FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r”
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q Ultrafast " ns Reverse Recovery Time
. Soft Recovery (S > 0.5)
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FDS89161
100V Dual N-Channel PowerTrench?MOSFET
® FDS89161 Dual N-Channel PowerTrench MOSFET June 2011 FDS89161 ® Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mΩ Features General Description Max r = 105 mΩ at V = 10 V, I = 2.7 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild ® Semiconductor‘s advanced Power Trench process that has Max r = 171 mΩ at V = 6 V, I = 2.1 A DS(on) GS D been optimized for r , switching performance and DS(on) High performance trench technology for extremely low r DS(on) ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Topology D2 D2 G2 D2 4 5 D1 D1 D2 S2 6 Q2 Q2 3 G2 D1 7 G1 2 S2 Q1 Q1 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 2.7 I A D -Pulsed 15 E Single Pulse Avalanche Energy (Note 3) 13 mJ AS Power Dissipation T = 25 °C 31 C P W D Power Dissipation T = 25 °C (Note1a) 1.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 4.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS89161 FDS89161 SO-8 13 ’’ 12 mm 2500 units ©2011 1 FDS89161 Rev. C2
