FDS8884 ,30V N-Channel PowerTrench?MOSFETNOITAT®FDS8884 N-Channel PowerTrench MOSFETNEMELMPIEEFebruary 2006FDS8884®N-Channel PowerTrench MOS ..
FDS8896 ,N-Channel PowerTrench?? MOSFETFeatures General Description
FDS8884
30V N-Channel PowerTrench?MOSFET
N O I T A T ® FDS8884 N-Channel PowerTrench MOSFET N E M E L MP I E E February 2006 FDS8884 ® N-Channel PowerTrench MOSFET 30V, 8.5A, 23mΩ General Descriptions Features Max r = 23mΩ at V = 10V, I = 8.5A DS(on) GS D This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max r = 30mΩ at V = 4.5V, I = 7.5A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge r and fast switching speed. DS(on) 100% R Tested G RoHS Compliant D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current Continuous (Note 1a) 8.5 A I D Pulsed 40 A E Single Pulse Avalanche Energy (Note 2) 32 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient (Note 1a) 50 C/W θJA o R Thermal Resistance, Junction to Case (Note 1) 25 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8884 FDS8884 SO-8 330mm 12mm 2500 units ©2006 1 FDS8884 Rev. A R F D A E L
