FDS8876 ,30V N-Channel PowerTrench?MOSFETFeatures General Description r = 8.2mΩ, V = 10V, I = 12.5A This N-Channel MOSFET has been designe ..
FDS8878 ,N-Channel PowerTrench MOSFETFeatures General Description r = 14mΩ , V = 10V, I = 10.2A This N-Channel MOSFET has been designe ..
FDS8880 ,N-Channel PowerTrench MOSFETFeatures General Description
FDS8876
30V N-Channel PowerTrench?MOSFET
® FDS8876 N-Channel PowerTrench MOSFET April 2007 tm FDS8876 ® N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mΩ Features General Description r = 8.2mΩ, V = 10V, I = 12.5A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency of DC/DC converters using r = 10.2mΩ, V = 4.5V, I = 11.4A either synchronous or conventional switching PWM DS(on) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(on) r DS(on) Applications Low gate charge DC/DC converters High power and current handling capability RoHS Compliant Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2007 1 FDS8876 Rev. B
