FDS8813NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 4.5mΩ at V = 10V, I ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and High power and current handling capability Portable ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7mΩ at V = 10V, I = ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7mΩ at V = 10V, I = ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and High power and current handling capability Portable ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and High power and current handling capability Portable ..
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR607 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR804 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FR805 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FR805. , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FDS8813NZ
30V N-Channel PowerTrench?MOSFET
® FDS8813NZ N-Channel PowerTrench MOSFET May 2013 FDS8813NZ ® N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 4.5mΩ at V = 10V, I = 18.5A DS(on) GS D ® Semiconductor’s advanced PowerTrench process that has Max r = 6.0mΩ at V = 4.5V, I =16A DS(on) GS D been especially tailored to minimize the on-state resistance. HBM ESD protection level of 5.6KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low r DS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant D D D G D D S D G S D SO-8 S S S D S Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 18.5 I A D -Pulsed 74 E Single Pulse Avalanche Energy (Note 4) 337 mJ AS Power Dissipation (Note 1a) 2.5 P W D Power Dissipation (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 125 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8813NZ FDS8813NZ 13” 12mm 2500 units 1 ©2008 FDS8813NZ Rev.C2
