FDS86240 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS86242 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETFeatures This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 1 ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETApplications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Sync ..
FDS8672S General Description Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 7.6mΩ, V = 10V, I = 14ADS(on) GS DThis N-Channel MOSFET has been designed specif ..
FR302 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR304 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR607 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FDS86240
150V N-Channel PowerTrench?MOSFET
® FDS86240 N-Channel PowerTrench MOSFET June 2010 FDS86240 ® N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description Max r = 19.8 mΩ at V = 10 V, I = 7.5 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild ® Semiconductor‘s advanced Power Trench process that has Max r = 26 mΩ at V = 6 V, I = 6.4 A DS(on) GS D been optimized for r , switching performance and DS(on) High performance trench technology for extremely low r DS(on) ruggedness. High power and current handling capability in a widely used Applications surface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 24 V and 48 V Systems High Voltage Synchronous Rectifier D D 4 G D 5 D 6 S D D 3 7 2 S D G SO-8 S 8 1 D S S Pin 1 S MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 7.5 I A D -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 220 mJ AS Power Dissipation T = 25 °C (Note 1) 5.0 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86240 FDS86240 SO-8 13 ’’ 12 mm 2500 units ©2010 1 FDS86240 Rev.C
