FDS8449_F085 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FDS86240 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS86242 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETFeatures This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 1 ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETApplications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Sync ..
FDS8672S General Description Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single ..
FR302 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR302 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR304 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FDS8449_F085
40V N-Channel PowerTrench?MOSFET
® FDS8449_F085 40V N-Channel PowerTrench MOSFET July 2009 FDS8449_F085 ® 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize R = 36mΩ @ V = 4.5V DS(on) GS on-state resistance and yet maintain superior switching performance. • High power handling capability in a widely used surface mount package Application • RoHS compliant • Inverter • Qualified to AEC Q101 • Power Supplies DD 5 4 DD D D 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 7.6 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 125 θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8449 FDS8449_F085 13’’ 12mm 2500 units ©2009 1 FDS8449_F085 Rev. A
