FDS8433A_NL ,Single P-Channel 2.5V Specified MOSFETApplications• Load switch• DC/DC converter• Battery protectionD5 4DDD 6 372GS18SSO-8 ST = 25°C unle ..
FDS8449 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FDS8449_F085 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FDS86240 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS86242 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package DC/DC converters and Off-Line UPS 100% UIL Tested Distributed ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETFeatures This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 1 ..
FR256 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 2.5A
FR302 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR302 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR304 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FDS8433A
Single P-Channel 2.5V Specified MOSFET
FDS8433A September 2000 FDS8433A Single P-Channel 2.5V Specified MOSFET Features General Description • -5 A, -20 V. R = 0.047 Ω @ V = -4.5 V This P-Channel enhancement mode power field effect DS(on) GS transistors is produced using Fairchild’s proprietary, R = 0.070 Ω @ V = -2.5 V DS(on) GS high cell density, DMOS technology. This very high density processis especially tailored to minimize • Fast switching speed. on-state resistance and provide superior switching • High density cell design for extremely low R . DS(on) performance. • High power and current handling capability. Applications • Load switch • DC/DC converter • Battery protection D 5 4 D D D 6 3 7 2 G S 1 8 S SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter FDS8433A Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) -5 A D - Pulsed -50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W JA ° θ (Note 1) R JC Thermal Resistance, Junction-to-Case 25 C/W ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8433A FDS8433A 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS8433A Rev. C
