FDS8333C ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDS8333C ,30V N & P-Channel PowerTrench MOSFETsapplications where low in-line power loss and fast switching are • High performance trench technolo ..
FDS8433A ,Single P-Channel 2.5V Specified MOSFETGeneral Description• -5 A, -20 V. R = 0.047 Ω @ V = -4.5 VThis P-Channel enhancement mode power fie ..
FDS8433A_NL ,Single P-Channel 2.5V Specified MOSFETApplications• Load switch• DC/DC converter• Battery protectionD5 4DDD 6 372GS18SSO-8 ST = 25°C unle ..
FDS8449 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FDS8449_F085 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS8333C
30V N & P-Channel PowerTrench MOSFETs
FDS8333C August 2002 FDS8333C Ò 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are · Q1 4.1 A, 30V. R = 80 mW @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor’s RDS(ON) = 130 mW @ V GS = 4.5 V advanced PowerTrench process that has been especially tailored to minimize on-state · Q2 –3.4 A, 30V. R = 130 mW @ V = –10 V DS(ON) GS resistance and yet maintain superior switching performance. R = 200 mW @ V = –4.5 V DS(ON) GS These devices are well suited for low voltage · Low gate charge and battery powered applications where low in-line power loss and fast switching are · High performance trench technology for extremely required. low R . DS(ON) · High power and handling capability in a widely used surface mount package. D2 Q2 D D2 5 4 D D1 D D1 D 6 3 Q1 7 2 G2 SO-8 S2 G G1 S 8 1 S1 S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 –30 V V Gate-Source Voltage ±16 ±20 GSS I Drain Current – Continuous (Note 1a) 4.1 –3.4 A D – Pulsed 20 –20 Power Dissipation for Dual Operation 2 PD Power Dissipation for Single Operation (Note 1a) 1.6 W (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics 78 °C/W RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R Thermal Resistance, Junction-to-Case (Note 1) qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8333C FDS8333C 7’’ 12mm 2500 units Ó2002 FDS8333C Rev C (W)
