FDS7779Z_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7788 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 18 A, 30 V. R = 4.0 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS7788_NL ,30V N-Channel PowerTrench MOSFETFDS7788February 2005FDS7788Ò30V N-Channel PowerTrench MOSFET
FDS8333C ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDS8333C ,30V N & P-Channel PowerTrench MOSFETsapplications where low in-line power loss and fast switching are • High performance trench technolo ..
FDS8433A ,Single P-Channel 2.5V Specified MOSFETGeneral Description• -5 A, -20 V. R = 0.047 Ω @ V = -4.5 VThis P-Channel enhancement mode power fie ..
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS7779Z-FDS7779Z_NL
30V P-Channel PowerTrench MOSFET
FDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 11.5 mΩ @ V = – 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. • ESD protection diode (note 3) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely R specifications. DS(ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive • High power and current handling capability (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS I Drain Current – Continuous (Note 1a) –16 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7779Z FDS7779Z 13’’ 12mm 2500 units FDS7779Z Rev C1 (W) 2003
