FDS7766 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchry 2002Februa FDS7766 T = 25°C unless otherwise noted ..
FDS7766_NL ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7779Z ,30V P-Channel PowerTrench MOSFETFDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET
FDS7779Z ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7779Z_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7788 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 18 A, 30 V. R = 4.0 mΩ @ V = 10 VDS(ON) GSspecif ..
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS7766
30V N-Channel PowerTrench MOSFET
FDS7766 FDS7766 Ò Ò 30V N- This N-Channel MOSFET has been designed · 17 A, 30 V R = 5.5 m W = 10 V GS specifically to improve the overall efficiency of DC/DC R = 6.5 m W = 4.5 V GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · High power and current handling capability · Synchronous rectifier · Fast switching · DC/DC converter D D54 D D63 72 G S 81 S SO-8S o T=25C unless o A Ratings Units V Drain-Source Voltage V V -Source Voltage ± V I Drain Current – Continuous A D – Pulsed Power Dissipation for Single Operation P W D (Note 1c) TJ, T Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Ambient (Note 1c) °C/W q R Thermal Resistance, Junction-to-Case °C/W qJC Device Marking Reel Size Tape width Quantity FDS7766 FDS7766 12mm 2500 units 1 Ó 2002 (W)FDS7766 Rev C 13’’ Device Package Marking and Ordering Information 25(Note 1) JA 125 JA 50(Note 1a) STG 1.0 1.2 (Note 1b) 2.5(Note 1a) 60 17(Note 1a) GSS 16Gate DSS 30 ParameterSymbol therwise notedAbsolute Maximum Ratings Applications low RDS(ON) DS(ON) @ V DS(ON) @ V FeaturesGeneral Description MOSFETChannel PowerTrench ry 2002Februa
