FDS7764S_NL ,30V N-Channel PowerTrench SyncFETFDS7764S September 2002 FDS7764S ™30V N-Channel PowerTrench SyncFET
FDS7766 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchry 2002Februa FDS7766 T = 25°C unless otherwise noted ..
FDS7766_NL ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7779Z ,30V P-Channel PowerTrench MOSFETFDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET
FDS7779Z ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7779Z_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS7764S-FDS7764S_NL
30V N-Channel PowerTrench SyncFET
FDS7764S September 2002 FDS7764S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 7.5 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 9.0 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDS7764S includes DS(ON) an integrated Schottky diode using Fairchild’s • Low gate charge (25 nC typical) monolithic SyncFET technology. Applications • High performance trench technology for extremely low R and fast switching DS(ON) • DC/DC converter • Motor drives • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO8 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 13.5 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 30 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7764S FDS7764S 13’’ 12mm 2500 units FDS7764S Rev D (W) 2002
