FDS7764A ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench 200January FDS7764A T = 25°C unless otherwise noted A ..
FDS7764A_NL ,30V N-Channel PowerTrench MOSFETApplications • Synchronous rectifier • DC/DC converter DD5 4DD6 37 2GS8 1SSO-8S oAbsolute Maximu ..
FDS7764S ,30V N-Channel PowerTrench SyncFETFeatures The FDS7764S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 7.5 mΩ @ V = 10 V D ..
FDS7764S_NL ,30V N-Channel PowerTrench SyncFETFDS7764S September 2002 FDS7764S ™30V N-Channel PowerTrench SyncFET
FDS7766 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchry 2002Februa FDS7766 T = 25°C unless otherwise noted ..
FDS7766_NL ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FR155 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
FR158 , 1.5 Amp FAST RECOVERY Glass Passivated Rectifiers
FR1602 , CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FDS7764A
30V N-Channel PowerTrench MOSFET
FDS7764A 2 FDS7764A Ò Ò 30V N- This N-Channel MOSFET has been designed · 15 A, 30 V. R = 7.5 m W @ V = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional · High performance trench technology for extremely switching PWM controllers. It has been optimized for High power and current handling DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. capability · Synchronous rectifier · DC/DC converter D D54 D D63 72 G S 81 S SO-8S o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage ± V I Drain Current – Continuous A D – Pulsed Power Dissipation for Single Operation P W D (Note 1c) TJ, T Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Case °C/W qJC Device Marking Reel Size Tape width Quantity FDS7764A FDS776 12mm 2500 units Rev (W) Ó2 200 D FDS7764A 13’’4A Device Package Marking and Ordering Information 30(Note 1) JA 50(Note 1a) STG 1.0 1.2 (Note 1b) 2.5(Note 1a) 50 15(Note 1a) GSS 12Gate DSS 30 ParameterSymbol Absolute Maximum Ratings Applications DS(ON) low R GSDS(ON) FeaturesGeneral Description MOSFETChannel PowerTrench 200January
