FDS7764A_NL ,30V N-Channel PowerTrench MOSFETApplications • Synchronous rectifier • DC/DC converter DD5 4DD6 37 2GS8 1SSO-8S oAbsolute Maximu ..
FDS7764S ,30V N-Channel PowerTrench SyncFETFeatures The FDS7764S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 7.5 mΩ @ V = 10 V D ..
FDS7764S_NL ,30V N-Channel PowerTrench SyncFETFDS7764S September 2002 FDS7764S ™30V N-Channel PowerTrench SyncFET
FDS7766 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchry 2002Februa FDS7766 T = 25°C unless otherwise noted ..
FDS7766_NL ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7779Z ,30V P-Channel PowerTrench MOSFETFDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET
FR158 , 1.5 Amp FAST RECOVERY Glass Passivated Rectifiers
FR1602 , CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FDS7764A_NL
30V N-Channel PowerTrench MOSFET
FDS7764A March 2005 FDS7764A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 15 A, 30 V. R = 7.5 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R . High power and current handling DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) capability Applications • Synchronous rectifier • DC/DC converter D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 15 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7764A FDS7764A 13’’ 12mm 2500 units FDS7764A Rev E1 (W) 2005
