FDS7098N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • DC/DC converter • Fast switching • Pow ..
FDS7288N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET in the thermally enhanced • 20.5 A, 30 V R = 4.5 mΩ @ V = 10 V DS( ..
FDS7296N3 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET in the thermally enhanced• 15 A, 30 V R = 8 mΩ @ V = 10 VDS(ON) GSS ..
FDS7760A ,N-Channel Logic Level PowerTrench ?MOSFETFDS7760 A FDS7760 A ®N- MOSFET This N-Channel Logic Level MOSFET is produced • 15 A, 30 V . R ..
FDS7760A_NL ,N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power loss and fast switching are required. • High performance trenc ..
FDS7764A ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench 200January FDS7764A T = 25°C unless otherwise noted A ..
FR1112H , Single Color High Brightness Type
FR155 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
FR158 , 1.5 Amp FAST RECOVERY Glass Passivated Rectifiers
FR1602 , CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FDS7098N3
30V N-Channel PowerTrench MOSFET
FDS7098N3 May 2004 FDS7098N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 14 A, 30 V R = 9 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 12 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • High power and current handling capability • DC/DC converter • Fast switching • Power management • Load switch • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 14 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.5 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7098N3 FDS7098N3 13’’ 12mm 2500 units FDS7098N3 Rev C (W) 2004
