FDS7066SN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066SN3 is designed to replace a single SO-8 • 19 A, 30 V R = 5.5 mΩ @ V = 10 V D ..
FDS7079ZN3 ,30V P-Channel PowerTrench MOSFETApplications for this device include multi-cell battery • ESD rating: 4kV protection and charging, ..
FDS7079ZN3 ,30V P-Channel PowerTrench MOSFETGeneral Description Advanced P Channel MOSFET combined with • –16 A, –30 V. R = 7.5 mΩ @ V = –10 V ..
FDS7082N3 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS7088N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 4 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS7088N7 ,30V N-Channel. PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 3 mΩ @ V = 10 V DS(ON) GSspecif ..
FR105G , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FR11-0004 ,1930-1990 MHz,3-port DROP-IN circulator
FR1101F , Series Right Angle AlInGaP SMT LED
FDS7066SN3
30V N-Channel PowerTrench SyncFET
FDS7066SN3 January 2004 FDS7066SN3 ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066SN3 is designed to replace a single SO-8 • 19 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GS FLMP MOSFET and Schottky diode in synchronous R = 6.0 mΩ @ V = 4.5 V DS(ON) GS DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a • High performance trench technology for extremely low R and low gate charge. The FDS7066SN3 DS(ON) includes an integrated Schottky diode using Fairchild’s low R DS(ON) monolithic SyncFET technology. The performance of the FDS7066SN3 as the low-side switch in a • High power and current handling capability synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. • Fast switching Applications • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size • DC/DC converter • Motor drivesFeatures Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 19 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7066SN3 FDS7066SN3 13’’ 12mm 2500 units 2004 FDS7066SN3 Rev C2 (W)
