FDS7066N7 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 4.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066SN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066SN3 is designed to replace a single SO-8 • 19 A, 30 V R = 5.5 mΩ @ V = 10 V D ..
FDS7079ZN3 ,30V P-Channel PowerTrench MOSFETApplications for this device include multi-cell battery • ESD rating: 4kV protection and charging, ..
FDS7079ZN3 ,30V P-Channel PowerTrench MOSFETGeneral Description Advanced P Channel MOSFET combined with • –16 A, –30 V. R = 7.5 mΩ @ V = –10 V ..
FDS7082N3 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS7088N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 4 mΩ @ V = 10 V DS(ON) GSspecif ..
FR102 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR103 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR105G , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FDS7066N7
30V N-Channel PowerTrench MOSFET
FDS7066N7 July 2002 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 23 A, 30 V R = 4.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 5.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D Drain Contact DS 5 4 D S S D 6 3 D S 7 2 Bottomless G G S 8 1 SO-8 S S S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±16 I Drain Current – Continuous (Note 1a) 23 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7066N7 FDS7066N7 13’’ 12mm 2500 units FDS7066N7 Rev D1 (W) 2002
