FDS7066ASN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066ASN3 is designed to replace a single SO-• 19 A, 30 V R = 4.8 mΩ @ V = 10 V DS ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFDS7066N3June 2002 FDS7066N3 30V N-Channel PowerTrench MOSFET
FDS7066N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066N7 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 4.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066SN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066SN3 is designed to replace a single SO-8 • 19 A, 30 V R = 5.5 mΩ @ V = 10 V D ..
FR102 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
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FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FDS7066ASN3
30V N-Channel PowerTrench SyncFET
FDS7066ASN3 August 2004 FDS7066ASN3 ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- • 19 A, 30 V R = 4.8 mΩ @ V = 10 V DS(ON) GS 8 FLMP MOSFET and Schottky diode in synchronous R = 6.0 mΩ @ V = 4.5 V DS(ON) GS DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a • High performance trench technology for extremely low R and low gate charge. The FDS7066ASN3 DS(ON) includes an integrated Schottky diode using Fairchild’s low R DS(ON) monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a • High power and current handling capability synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. • Fast switching Applications • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size • DC/DC converter Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 19 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7066ASN3 FDS7066ASN3 13’’ 12mm 2500 units FDS7066ASN3 Rev A (W) ©2004
