FDS7064N7 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchJanuary 2002 FDS7064N7 T = 25°C unless otherwise noted ..
FDS7066ASN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066ASN3 is designed to replace a single SO-• 19 A, 30 V R = 4.8 mΩ @ V = 10 V DS ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFDS7066N3June 2002 FDS7066N3 30V N-Channel PowerTrench MOSFET
FDS7066N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066N7 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 4.5 mΩ @ V = 10 V DS(ON) GSspec ..
FR102 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR103 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR105G , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FDS7064N7
30V N-Channel PowerTrench MOSFET
FDS7064N7 FDS7064N7 Ò Ò 30V N- This N-Channel MOSFET has been designed · 16.5 A, 30 V R = 7.0 m W = 4.5 V GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional · High performance trench technology for extremely switching PWM controllers. It has been optimized for DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. · High power and current handling capability · Fast switching · Synchronous rectifier · Bottomless ä-8 package: Enhanced thermal · DC/DC converter performance in industry-standard package size Bottom-side DDrain Contact DS54 DS SD 63 DS 72 G G S81 S S S SSO-8S o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage ± V I Drain Current – Continuous A D – Pulsed P Power Dissipation for Single Operation W D T, T Operating and Storage Junction Temperature Range –55 to +150 °C J Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Case °C/W qJC Device Marking Reel Size Tape width Quantity FDS7064N7 FDS7064N7 12mm 2500 units Ó2 200 (W)FDS7064N7 Rev C 13’’ Device Package Marking and Ordering Information 0.5 JA 40(Note 1a) STG 3.0(Note 1a) 60 16.5(Note 1a) GSS 12Gate DSS 30 meterParaSymbol Absolute Maximum Ratings Pin 1 SO-8 Bottomless SO Applications DS(ON) low R DS(ON) @ V FeaturesGeneral Description MOSFETChannel PowerTrench January 2002
