FDS7064A ,30V N-Channel PowerTrench MOSFETApplications• Fast switching• Synchronous rectifier• Bottomless
FDS7064A
30V N-Channel PowerTrench MOSFET
FDS7064A May 2000 ADVANCE INFORMATION FDS7064A Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 19 A, 30 V R = 6.5 mW @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional · High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS( ON) · High power and current handling capability Applications · Fast switching · Synchronous rectifier · Bottomlessä SO-8 package: Enhanced thermal · DC/DC converter performance in industry-standard package size Bottom-sid e D Drain Contact S D 5 4 D S S D 6 3 S D 7 2 Bottomless G G S 8 1 SO-8 S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 19 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.9 P W D T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 38 °C/W qJA R Thermal Resistance, Junction-to-Case 1 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7064A FDS7064A 13’’ 12mm 2500 units FDS7064A Rev A1(W) Ó2000
