FDS6990S ,Dual 30V N-Channel PowerTrench SyncFET TMFeatures The FDS6990S is designed to replace a dual SO-8 • 7.5A, 30 V. R = 22 mΩ @ V = 10 V DS(ON) ..
FDS6993 ,Dual P-Channel PowerTrench MOSFETFeatures • Q1: P-Channel These P-Channel MOSFETs are made Òusing FSC’s PowerTrench technology. – ..
FDS6993_NL ,Dual P-Channel PowerTrench MOSFETFDS6993 June 2003 FDS6993 ÒDual P-Channel PowerTrench MOSFET
FDS6994S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6994S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6994S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6994S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS7060N7 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchFebruary 2002 FDS7060N7 T = 25°C unless otherwise note ..
FQU7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQU7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FQU7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
FQU7P06 ,60V P-Channel MOSFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P06TU ,60V P-Channel QFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P20 ,200V P-Channel MOSFET
FDS6990S
Dual 30V N-Channel PowerTrench SyncFET TM
FDS6990S May 2001 FDS6990S Ò ™ Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 · 7.5A, 30 V. R = 22 mW @ V = 10 V DS(ON) GS MOSFET and two Schottky diodes in synchronous R = 30 mW @ V = 4.5 V DS(ON) GS DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a · Includes SyncFET Schottky diode low R and low gate charge. Each MOSFET DS(ON) includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (11 nC typical) the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A · High performance trench technology for extremely low in parallel with a Schottky diode. R DS(ON) Applications · High power and current handling capability · DC/DC converter · Motor drives D1 D 5 4 D1 D Q1 D2 D 6 3 D2 D 7 2 Q2 G1 SO-8 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990S FDS6990S 13’’ 12mm 2500 units FDS6990S Rev B(W) Ó2001
