FDS6990AS General Description 7.5 A, 30 V. R = 22 mΩ @ V = 10 V The FDS6990AS is designed to replace a dual S ..
FDS6990AS ®FDS6990AS Dual 30V N-Channel PowerTrench SyncFET™ ..
FDS6990AS Applications DC/DC converter Motor drivesD1D1 5 4Q1D26 3D2Q27 2G1SO-8S1G28Pin 1 1S2Absolute Maximu ..
FDS6990AS Applications DC/DC converter Motor drivesD1D1 5 4Q1D26 3D2Q27 2G1SO-8S1G28Pin 1 1S2Absolute Maximu ..
FDS6990S ,Dual 30V N-Channel PowerTrench SyncFET TMFeatures The FDS6990S is designed to replace a dual SO-8 • 7.5A, 30 V. R = 22 mΩ @ V = 10 V DS(ON) ..
FDS6993 ,Dual P-Channel PowerTrench MOSFETFeatures • Q1: P-Channel These P-Channel MOSFETs are made Òusing FSC’s PowerTrench technology. – ..
FQU3N40 ,400V N-Channel MOSFET
FQU3N40 ,400V N-Channel MOSFET
FQU3N60 ,600V N-Channel MOSFET
FQU4P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, R = 2.1Ω @V = -10 VDS(o ..
FQU5N40TU ,400V N-Channel QFET
FQU5N60CTU ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
FDS6990AS
® FDS6990AS Dual 30V N-Channel PowerTrench SyncFET™ M March 2010 FDS6990AS ® Dual 30V N-Channel PowerTrench SyncFET™ Features General Description ■ 7.5 A, 30 V. R = 22 mΩ @ V = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET DS(ON) GS R = 28 mΩ @ V = 4.5 V and two Schottky diodes in synchronous DC:DC power sup- DS(ON) GS plies. This 30V MOSFET is designed to maximize power con- ■ Includes SyncFET Schottky diode version efficiency, providing a low R and low gate charge. DS(ON) ■ Low gate charge (10nC typical) Each MOSFET includes integrated Schottky diodes using Fair- ■ High performance trench technology for extremely low child’s monolithic SyncFET technology. The performance of the R DS(ON) FDS6990AS as the low-side switch in a synchronous rectifier is ■ High power and current handling capability similar to the performance of the FDS6990A in parallel with a Schottky diode. Applications ■ DC/DC converter ■ Motor drives D1 D1 5 4 Q1 D2 6 3 D2 Q2 7 2 G1 SO-8 S1 G2 8 Pin 1 1 S2 Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990AS FDS6990AS 13" 12mm 2500 units ©2010 1 FDS6990AS Rev. A2
