FDS6990A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6990A_NL. ,Dual N-Channel Logic Level PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 18 mΩ @ V = 10 VDS(ON) ..
FDS6990AS General Description 7.5 A, 30 V. R = 22 mΩ @ V = 10 V The FDS6990AS is designed to replace a dual S ..
FDS6990AS ®FDS6990AS Dual 30V N-Channel PowerTrench SyncFET™ ..
FDS6990AS Applications DC/DC converter Motor drivesD1D1 5 4Q1D26 3D2Q27 2G1SO-8S1G28Pin 1 1S2Absolute Maximu ..
FDS6990AS Applications DC/DC converter Motor drivesD1D1 5 4Q1D26 3D2Q27 2G1SO-8S1G28Pin 1 1S2Absolute Maximu ..
FQU2N90 ,900V N-Channel MOSFET
FQU2N90TU ,900V N-Channel QFET
FQU3N40 ,400V N-Channel MOSFET
FQU3N40 ,400V N-Channel MOSFET
FQU3N60 ,600V N-Channel MOSFET
FQU4P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, R = 2.1Ω @V = -10 VDS(o ..
FDS6990A_NL-FDS6990A_NL.
Dual N-Channel Logic Level PowerTrench MOSFET
FDS6990A June 2003 FDS6990A Ò Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 7.5 A, 30 V. R = 18 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 23 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Fast switching speed superior switching performance. · Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power · High performance trench technology for extremely loss and fast switching are required. low R DS(ON) · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 20 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990A FDS6990A 13’’ 12mm 2500 units Ó2003 FDS6990A Rev D(W)
