FDS6986AS ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6986AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6986S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6986S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFDS6990S May 2001 FDS6990S Ò ™Dual 30V N-Channel PowerTrench SyncFET
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETApplications • High power and current handling capability• DC/DC converter • Motor drives D1D5 4D ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeatures The FDS6990S is designed to replace a dual SO-8 • 7.5A, 30 V. R = 22 mΩ @ V = 10 V DS(ON) ..
FQT7N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !D""!!""""G ..
FQU10N20 ,200 N-Channel MOSFET
FQU10N20C ,200V N-Channel Advance Q-FET C-SeriesFQD10N20C / FQU10N20C®QFETFQD10N20C / FQU10N20C200V N-Channel MOSFET
FQU10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQU11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -9.4A, -60V, R = 0.185Ω @V = -10 VDS( ..
FQU12P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS6986AS
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6986AS D2/S1 D2/S1 D1 D1 G2 S2 G1 S1/D2 March 2005 FDS6986AS ® ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986AS is designed to replace two single SO- • Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 7.9A, 30V R = 20 mΩ @ V = 10V DS(on) GS voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two R = 28 mΩ @ V = 4.5V DS(on) GS unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion • Q1: Optimized for low switching losses efficiency. Low gate charge (10 nC typical) 6.5A, 30V R = 29 mΩ @ V = 10V The high-side switch (Q1) is designed with specific DS(on) GS emphasis on reducing switching losses while the low- R = 38 mΩ @ V = 4.5V side switch (Q2) is optimized to reduce conduction DS(on) GS losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Q2 5 4 D D D 6 3 D Q1 7 2 SO-8 G 8 1 S S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±16 I Drain Current - Continuous (Note 1a) 7.9 6.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6986AS FDS6986AS 13” 12mm 2500 units FDS6986AS FDS6986AS_NL (Note 4) 13” 12mm 2500 units FDS6986AS Rev A(X) ©2005
