FDS6984S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS6986AS ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6986AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6986S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6986S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFDS6990S May 2001 FDS6990S Ò ™Dual 30V N-Channel PowerTrench SyncFET
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETApplications • High power and current handling capability• DC/DC converter • Motor drives D1D5 4D ..
FQT5P10TF ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQT7N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQT7N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !D""!!""""G ..
FQU10N20 ,200 N-Channel MOSFET
FQU10N20C ,200V N-Channel Advance Q-FET C-SeriesFQD10N20C / FQU10N20C®QFETFQD10N20C / FQU10N20C200V N-Channel MOSFET
FQU10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FDS6984S_NL
Dual Notebook Power Supply N-Channel PowerTrench SyncFet
FDS6984S September 2000 FDS6984S ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky diode power supplies that provide various peripheral voltages 8.5A, 30V R = 19 mΩ=@ V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6984S contains two unique R = 28 mΩ=@ V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses Low gate charge ( 5 nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 5.5A, 30V R = 0.040Ω=@ V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 0.055Ω=@ V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchild’s monolithic SyncFET technology. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 8.5 5.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6984S FDS6984S 13” 12mm 2500 units 2000 FDS6984S Rev C(W)
